Plasma Metallization Coating and Its Adhesion to Microwave Transistor Substrate—Part 1: Methods of Experimental Research

Author

Vysikaylo, Philipp I. ; Mitin, Valeriy S. ; Mitin, Aleksey V. ; Krasnobaev, Nikolay N. ; Belyaev, Victor V.

Author_Institution

Plasma Chem. Lab., Moscow Radiotechnical Inst., Moscow, Russia

Volume

43

Issue

4

fYear

2015

fDate

Apr-15

Firstpage

1088

Lastpage

1092

Abstract

A previously proposed mechanism of adhesion of a plasma metal coating to a ceramic substrate is investigated experimentally. This adhesion mechanism is based on the increase in the concentration of structural defects (vacancies) and electron exchange interaction of a metal-oxide beryllium pair during the plasma thermal activation of the process. Given the brazing of ceramic products with hard solders in hydrogen, the coating composition for metallization is determined. The optimal temperature of reactive plasma metals coating for strong adhesion to the ceramic substrate is found. Methods to improve the technology of plasma vacuum metallization using ion-plasma magnetron sputtering and ion implantation are proposed.

Keywords

adhesion; brazing; coatings; exchange interactions (electron); ion implantation; metallisation; microwave transistors; plasma materials processing; sputter deposition; vacancies (crystal); adhesion; brazing; ceramic substrate; electron exchange interaction; hard solders; hydrogen; ion implantation; ion-plasma magnetron sputtering; metal-oxide beryllium pair; microwave transistor; plasma metal coating; plasma metallization coating; plasma thermal activation; structural defects; vacancies; Adhesives; Ceramics; Coatings; Metals; Plasma temperature; Substrates; Diffusion of vacancies; high-power microwave devices; mechanism and kinetics of formation of adhesion; plasma metal coating; power layer; power layer.;

fLanguage

English

Journal_Title

Plasma Science, IEEE Transactions on

Publisher

ieee

ISSN

0093-3813

Type

jour

DOI

10.1109/TPS.2015.2404833

Filename

7052363