Effects of line width and dose on electron beam nano-patterning of ma-N 2403

The effects of dose on pattern shape were evaluated for electron beam nano-lithography of a negative photoresist, ma-N 2403, under an electron beam condition of 20 keV with a probe current of 9 pA. With sufficient design width, i.e. 250 nm, there was negligible loss of pattern height, which was attributed to the combined dose of the incident electron beam and the back scattered electrons. The dose for narrow design width should be adjusted to obtain patterns of high aspect ratio with no loss of height and reduced pattern width difference from the design width.