V-band high-efficiency monolithic pseudomorphic HEMT power amplifiers

Author

Pao, C.K. ; Lan, G.L. ; Wu, C.S. ; Igawa, A. ; Hu, M. ; Chen, J.C. ; Shih, Y.C.

Author_Institution

Hughes Aircraft Co., Torrance, CA, USA

Volume

2

Issue

10

fYear

1992

Firstpage

394

Lastpage

396

Abstract

V-band monolithic power amplifiers have been developed and demonstrate state-of-the-art performance. For a single-stage MMIC amplifier employing a 200- mu m pseudomorphic HEMT, 151.4 mW (757 Mw/mm) output power with 26.4% power-added efficiency at 60 GHz is achieved. Maximum power-added efficiency of 30.6% at 130-mW output power is also obtained. A three-stage MMIC amplifier utilizing the same devices demonstrated 80-mW output power, 20.5% power-added efficiency, and 17-dB associated gain at 57 GHz. The linear gain of the amplifier was 21.5 dB.<>

Keywords

MMIC; field effect integrated circuits; high electron mobility transistors; microwave amplifiers; power amplifiers; 17 dB; 20.5 to 30.6 percent; 200 micron; 21.5 dB; 57 GHz; 60 GHz; 80 to 151.4 mW; EHF; MM-wave type; MMIC; V-band; monolithic power amplifiers; power amplifiers; pseudomorphic HEMT; three-stage type; two-stage type; Circuits; Gain; HEMTs; High power amplifiers; MMICs; PHEMTs; Power amplifiers; Power generation; Space technology; Spaceborne radar;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.160118

Filename

160118