Monte-Carlo simulation of noise in GaAs at electric fields up to the critical field

Author

Adams, John G., III ; Tang, Ting-wei

Volume

13

Issue

7

fYear

1992

fDate

7/1/1992 12:00:00 AM

Firstpage

378

Lastpage

380

Abstract

Monte Carlo noise calculations using a method based on the Ramo-Schockley theorem were carried out for n-type homogeneous GaAs under a variety of conditions. Classical Nyquist noise results were reproduced for resistors at both 77 and 300 K. The method was used to model noise at 300 K at fields up to the critical field, and the results compare favorably with those found experimentally. An alternative method for determining the intervalley coupling constant by using noise temperature data is described, and the results using this method suggest the value of the intervalley coupling constant approximately=0.5*10/sup 9/ eV-cm/sup -1/.<>

Keywords

III-V semiconductors; Monte Carlo methods; electron device noise; gallium arsenide; high field effects; semiconductor device models; thermal noise; 300 K; 77 K; GaAs; Monte-Carlo simulation; Nyquist noise; Ramo-Schockley theorem; critical field; device noise; high electric fields; intervalley coupling constant; n-type; noise; noise temperature; resistors; Electromagnetic compatibility; Electrons; Equations; Fluctuations; Gallium arsenide; Optical noise; Phonons; Resistors; Semiconductor device noise; Temperature;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.192761

Filename

192761