Low-temperature characterization of high-current-gain graded-emitter AlGaAs/GaAs narrow-base heterojunction bipolar transistor

Author

Ikossi-Anastasiou, K. ; Ezis, A. ; Evans, K.R. ; Stutz, C.E.

Author_Institution

Dept. of Electr. & Comput. Eng., Louisiana State Univ., Baton Rouge, LA, USA

Volume

13

Issue

8

fYear

1992

Firstpage

414

Lastpage

417

Abstract

Narrow-based heterojunction bipolar transistors (NBHBTs) in the AlGaAs/GaAs material system, with a nominal base thickness of 50 AA, exhibit maximum small-signal common-emitter current gains of 1400 at 300 K and 3000 at 80 K. The performance of the device is attributed to the superlattice graded-emitter contact and a novel planar base access fabrication process. Low-temperature measurements indicate that the maximum current gain increases exponentially with decreasing temperature until it saturates around 200 K, suggesting a tunneling-limited current transport mechanism.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; semiconductor device testing; tunnelling; 80 to 300 K; AlGaAs-GaAs; graded emitter narrow base HBT; high-current-gain; low temperature characterization; planar base access fabrication process; small-signal common-emitter current gains; superlattice graded-emitter contact; tunneling-limited current transport mechanism; Bipolar transistors; Current measurement; FETs; Fabrication; Gain measurement; Gallium arsenide; Heterojunction bipolar transistors; Performance gain; Solid state circuits; Temperature;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.192776

Filename

192776