RF bandpass filter design based on CMOS active inductors

Author

Wu, Yue ; Ding, Xiaohui ; Ismail, Mohammed ; Olsson, Håkan

Volume

50

Issue

12

fYear

2003

Firstpage

942

Lastpage

949

Abstract

In this paper, a second-order RF bandpass filter based on active inductor has been implemented in a 0.35 μm CMOS process. Issues related to the intrinsic quality factor and dynamic range of the CMOS active inductor are addressed. Tuned at 900 MHz with Q=40, the filter has 28-dB spurious-free-dynamic-range (SFDR) and total current consumption (including buffer stage) is 17 mA with 2.7-V power supply. Experimental results also show the possibility of using them to build higher order RF filter and voltage-controlled oscillator (VCO).

Keywords

CMOS analogue integrated circuits; Q-factor; UHF filters; UHF integrated circuits; active filters; band-pass filters; circuit tuning; inductors; 900 MHz; CMOS active inductor; cross-coupled differential pair; dynamic range; intrinsic quality factor; second-order RF bandpass filter; spurious-free-dynamic-range; transimpedance relationship; tunable filter; voltage-controlled oscillator; Active filters; Active inductors; Active noise reduction; Band pass filters; CMOS process; Laboratories; Radio frequency; Spirals; Very large scale integration; Voltage-controlled oscillators;

fLanguage

English

Journal_Title

Circuits and Systems II: Analog and Digital Signal Processing, IEEE Transactions on

Publisher

ieee

ISSN

1057-7130

Type

jour

DOI

10.1109/TCSII.2003.820235

Filename

1255678