Electrical properties of MOSFET´s with N/sub 2/O-nitrided LPCVD SiO/sub 2/ gate dielectrics

Author

Ahn, J. ; Kwong, Dim-Lee

Author_Institution

Texas Univ., Austin, TX, USA

Volume

13

Issue

9

fYear

1992

Firstpage

494

Lastpage

496

Abstract

Electrical properties of MOSFETs with gate dielectrics of low-pressure chemical-vapor-deposited (LPCVD) SiO/sub 2/ nitrided in N/sub 2/O ambient are compared to those with control thermal gate oxide. N/sub 2/O nitridation of CVD oxide, combines the advantages of interfacial oxynitride growth and the defectless nature of CVD oxide. As a result, devices with N/sub 2/O-nitrided CVD oxide show considerably enhanced performance (higher effective electron mobility), improved reliability (reduced charge trapping, interface state generation, and transconductance degradation), and better time-dependent dielectric breakdown (TDDB) properties (t/sub BD/) compared to devices with control thermal oxide.<>

Keywords

carrier mobility; dielectric thin films; electric breakdown of solids; insulated gate field effect transistors; interface electron states; nitridation; semiconductor device testing; MOSFETs; N/sub 2/O nitridation; Si-SiO/sub x/N/sub y/; SiO/sub 2/; charge trapping; electrical properties; electron mobility; gate dielectrics; interface state generation; interfacial oxynitride growth; reliability; time-dependent dielectric breakdown; transconductance degradation; Annealing; CMOS technology; Dielectrics; Furnaces; Interface states; MOS capacitors; MOSFET circuits; Nitrogen; Oxidation; Thermal resistance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.192806

Filename

192806