DocumentCode
849021
Title
Continuous-wave GaInAsSb/AlGaAsSb type-I double quantum
Author
Grau, M. ; Lin, C. ; Dier, O. ; Amann, M.-C.
Author_Institution
Walter Schottky Inst., Tech. Univ. Munchen, Garching, Germany
Volume
39
Issue
25
fYear
2003
Firstpage
1816
Lastpage
1817
Abstract
GaInAsSb/AlGaAsSb type-I lasers with a long emission
Keywords
III-V semiconductors; aluminium compounds; current density; gallium arsenide; indium compounds; quantum well lasers; 2.96 micron; 55 C; GaInAsSb-AlGaAsSb; characteristic temperature; continuous-wave mode; double quantum well lasers; extrapolated threshold current density; highly strained active region; lattice-matched claddings; long emission wavelength; pulsed mode; room-temperature lasers; type-I lasers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20031216
Filename
1255731
Link To Document