Degradation of junction leakage in devices subjected to gate oxidation in nitrous oxide (MOS transistors)

Author

Mathews, Viju K. ; Maddox, Roy L. ; Fazan, Pierre C. ; Rosato, John ; Hwang, Hyunsang ; Lee, Jack

Author_Institution

Micron Semiconductor Inc., Boise, ID, USA

Volume

13

Issue

12

fYear

1992

Firstpage

648

Lastpage

650

Abstract

Nitrided gate oxides offer several electrical and reliability advantages over conventional oxides and also provide a good barrier against impurity diffusion. Oxidation in nitrous oxide (N/sub 2/O) has been very successful in overcoming some of the problems associated with nitridation in ammonia. The authors have observed that the extent of N/sub 2/O oxidation has a strong detrimental effect on the drain leakage current of MOS transistors in the off state. This phenomenon has been identified to be caused by an increase in the active area junction leakage current.<>

Keywords

carrier lifetime; insulated gate field effect transistors; leakage currents; oxidation; semiconductor device testing; C-V testing; MOS transistors; N/sub 2/O oxidation; active area junction leakage current; drain leakage current; gate oxidation; impurity diffusion; junction leakage; minority carrier diffusion length; off state; reliability advantages; Annealing; Current measurement; Degradation; Diodes; Implants; Impurities; Leakage current; Lifting equipment; MOSFET circuits; Oxidation;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.192873

Filename

192873