DocumentCode
850413
Title
Total Dose Failure Levels of Some Vlsics
Author
King, E.E. ; Manzo, G.J.
Author_Institution
Naval Research Laboratory Washington, D. C. 20375
Volume
27
Issue
6
fYear
1980
Firstpage
1449
Lastpage
1451
Abstract
Two types of devices representative of very-largescale-integration, 64k dynamic RAMs and 68000 microprocessors, have been studied in a total dose ionizing radiation environment. Both types of parts show an improved hardness compared to earlier test results for large-scale-integrated dynamic RAMs and microprocessors. This indicates that the previously developed downward trend of radiation hardness versus circuit complexity may not continue to prevail.
Keywords
Content addressable storage; Current measurement; DRAM chips; Ionizing radiation; Microprocessors; Production; Space technology; Temperature; Thickness measurement; Voltage;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1980.4331049
Filename
4331049
Link To Document