DocumentCode
851124
Title
Properties and device applications of evaporated InSb films
Author
Wieder, H.H.
Author_Institution
U. S. Naval Ordnance Lab., Corona, Calif.
Volume
51
Issue
3
fYear
1963
fDate
3/1/1963 12:00:00 AM
Firstpage
513
Lastpage
514
Abstract
Summary form only. An abstract of the above-titled article, taken from the 1963 IEEE International Convention (held March 25-28, New York, NY, USA), is presented.
Keywords
Anisotropic magnetoresistance; Conducting materials; Germanium; Hall effect; Impurities; Indium; Plasma temperature; Semiconductor films; Thermoelectric devices; Thermoelectricity;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1963.1966
Filename
1443896
Link To Document