Long wavelength resonant cavity photodetector based on InP/air-gap Bragg reflectors

Author

Hui Huang ; Yongqing Huang ; Xingyan Wang ; Qi Wang ; Xiaomin Ren

Author_Institution

Beijing Univ. of Posts & Telecommun., China

Volume

16

Issue

1

fYear

2004

Firstpage

245

Lastpage

247

Abstract

We demonstrate a long wavelength resonant cavity photodetector with InP/air-gap Bragg reflectors, which is fabricated by using selective wet etching. The peak quantum efficiency is 59% at 1510 nm. A 3-dB bandwidth of 8 GHz has been achieved with the active area of 50×50 μm². Compared with the detector of same absorption depth, a three-fold increase of absorption efficiency is obtained at resonant wavelength.

Keywords

III-V semiconductors; distributed Bragg reflectors; etching; indium compounds; microcavities; optical fabrication; optical resonators; photodetectors; photolithography; 1510 nm; 8 GHz; InP; InP/air-gap Bragg reflectors; absorption efficiency; current-voltage characteristic; fabrication; long wavelength photodetector; metal-organic chemical vapor deposition; p-i-n photodetector; peak quantum efficiency; photolithography; resonant cavity photodetector; selective wet etching; semiinsulating substrate; transfer matrix method; Absorption; Air gaps; Bandwidth; Indium phosphide; Mirrors; Optical filters; Photodetectors; Reflectivity; Resonance; Wet etching;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2003.818940

Filename

1256013