• DocumentCode
    851324
  • Title

    200 Channel Semiconductor Detectors for X-Ray Computed Tomography

  • Author

    Naruse, Y. ; Kobayashi, T. ; Jimbo, M. ; Tanoue, T. ; Suzuki, T.

  • Author_Institution
    Sensor Group, Electron Devices Laboratory, Toshiba R & D Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki-city, Kanagawa, 210, Japan
  • Volume
    28
  • Issue
    1
  • fYear
    1981
  • Firstpage
    47
  • Lastpage
    49
  • Abstract
    Prototype 200 channel semiconductor detectors for third generation X-ray computed tomography have been developed using surface-barrier diodes fabricated from high-purity n-type silicon. The image reconstruction test was successful, and the relationship between the image quality and the detector characteristics has been studied.
  • Keywords
    Computed tomography; Image reconstruction; Prototypes; Semiconductor diodes; Silicon; Surface reconstruction; Testing; X-ray detection; X-ray detectors; X-ray imaging;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1981.4331137
  • Filename
    4331137
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=851324