An asynchronous pixel architecture for simultaneous radiation imaging and spectroscopy on a real-time basis

Author

Kapnistis, C. ; Misiakos, K. ; Haralabidis, N. ; Kyriakis-Bitzaros, E.D.

Author_Institution

Inst. of Microelectron., N.C.S.R. Demokritos, Athens, Greece

Volume

49

Issue

4

fYear

2002

fDate

8/1/2002 12:00:00 AM

Firstpage

1802

Lastpage

1807

Abstract

A pixel chip is presented, employing an asynchronous architecture capable of simultaneous imaging and spectroscopy, on a real-time basis, with no external control signals. The mixed analog-digital architecture has been implemented using a commercial 0.8 μm CMOS technology. The detectors are monolithically integrated with the pixel electronics. The pixel pitch is 300×300 μm². The measured gain is 1270 mV/fC at. 200-ns shaping time, and the ENC is 18 e^- at 40-fF total input capacitance. The power dissipation per pixel is 2 mW at. 3.3 V.

Keywords

CMOS integrated circuits; mixed analogue-digital integrated circuits; nuclear electronics; readout electronics; CMOS technology; asynchronous pixel architecture; mixed analog-digital architecture; pixel readout electronics; radiation imaging; radiation spectroscopy; shaping time; CMOS technology; Capacitance; Microelectronics; Operational amplifiers; Pixel; Radiation imaging; Spectroscopy; Voltage; X-ray detection; X-ray detectors;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2002.801500

Filename

1043513