• DocumentCode
    852413
  • Title

    Effects of energy relaxation time on performance of AlGaAs/GaAs heterojunction bipolar transistor

  • Author

    Horio, K.

  • Author_Institution
    Dept of Electr. Eng., Shibaura Inst. of Technol., Tokyo, Japan
  • Volume
    25
  • Issue
    8
  • fYear
    1989
  • fDate
    4/13/1989 12:00:00 AM
  • Firstpage
    547
  • Lastpage
    549
  • Abstract
    Numerical simulations of an AlGaAs/GaAs heterojunction bipolar transistor are performed by using an energy transport model. It is found that the energy relaxation time is an important parameter to determine the device performance. A longer energy relaxation time is desirable to achieve a higher cutoff frequency.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; relaxation; semiconductor device models; AlGaAs-GaAs; HBT; III-V semiconductors; cutoff frequency; device performance; energy relaxation time; energy transport model; heterojunction bipolar transistor; numerical simulation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890374
  • Filename
    46158
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=852413