ZnO-Based Low-Voltage Inverter With Quantum-Well-Structured Nanohybrid Dielectric

Author

Cha, Sung Hoon ; Oh, Min Suk ; Lee, Kwang H. ; Choi, Jeong-M. ; Lee, Byoung H. ; Sung, Myung M. ; Im, Seongil

Author_Institution

Inst. of Phys. & Appl. Phys., Yonsei Univ., Seoul

Volume

29

Issue

10

fYear

2008

Firstpage

1145

Lastpage

1147

Abstract

We report on the fabrication of 2-V-operating ZnO-based inverter with two n-channel thin-film transistors (TFTs) on 22-nm-thin organic/inorganic nanohybrid dielectric, which contains AlO_x/TiO_x/AlO_x in triple-layer structure. The inverter shows a high voltage gain of ~20 under the supply voltage (V_DD) of 2 V but with a marginal transition voltage of 0.1 V (operation range of 0-2 V). To control the transition voltage to a more adequate value, an 8-V gate pulse was applied on driving ZnO-TFT so that some of the channel electrons would be tunneled through the AlO_x-based barrier and trapped in the TiO_x-based layer. Our inverter then displayed an optimum transition voltage of 0.75 V.

Keywords

II-VI semiconductors; aluminium compounds; dielectric materials; invertors; low-power electronics; nanocomposites; nanoelectronics; organic-inorganic hybrid materials; semiconductor quantum wells; thin film transistors; titanium compounds; wide band gap semiconductors; zinc compounds; AlO_x-TiO_x-AlO_x; AlO_x-based barrier; TiO_x-based layer; ZnO; ZnO-TFT; ZnO-based low-voltage inverter; channel electrons; marginal transition voltage; n-channel thin-film transistors; optimum transition voltage; organic/inorganic nanohybrid dielectrics; quantum-well-structured nanohybrid dielectrics; size 22 nm; triple-layer structure; voltage 0.1 V; voltage 0.75 V; voltage 2 V; Charge injection devices; ZnO; organic–inorganic nanohybrid; organic–inorganic nanohybrid; thin-film transistors (TFTs);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2008.2002908

Filename

4618045