Ion implantation in high temperature superconducting films

Author

Ma, Q.Y. ; Wong, A. ; Carolan, J.F. ; Hardy, W.N. ; Kato, H. ; Hui, D. ; Jaeger, N.A.F.

Author_Institution

Dept. of Phys., British Columbia Univ., Vancouver, BC, Canada

Volume

5

Issue

2

fYear

1995

fDate

6/1/1995 12:00:00 AM

Firstpage

1181

Lastpage

1184

Abstract

Reactive ion implantation (RII) has been used to inhibit superconductivity in oxide superconductor materials. By introducing ions which are chemically reactive with oxygen into a high temperature superconductor (HTS) oxide film, the conductivity of the material may be inhibited by the interaction of the implanted ions with the oxygen in the oxide. Both Si and B ions, with doses ranging from 1/spl times/10/sup 15/-1/spl times/10/sup 17//cm/sup 2/, were implanted into epitaxial YBCO films with injection energies ranging from 20-180 keV, depending on the film thickness. The implanted ions do not alter the overall crystal structure of the HTS film, but do inhibit the electrical conductivity and diamagnetism. Multiple ion implantations have also been employed to achieve uniform ion distributions.<>

Keywords

barium compounds; high-temperature superconductors; ion implantation; superconducting epitaxial layers; superconducting thin films; superconducting transition temperature; yttrium compounds; 20 to 180 keV; B ion implantation; Si ion implantation; YBa/sub 2/Cu/sub 3/O; diamagnetism; epitaxial films; film thickness; high temperature superconductors; reactive ion implantation; thin films; Conducting materials; Conductive films; Conductivity; High temperature superconductors; Ion implantation; Semiconductor films; Superconducting epitaxial layers; Superconducting films; Superconducting materials; Superconductivity;

fLanguage

English

Journal_Title

Applied Superconductivity, IEEE Transactions on

Publisher

ieee

ISSN

1051-8223

Type

jour

DOI

10.1109/77.402772

Filename

402772