• DocumentCode
    854965
  • Title

    Visible AlGaAs single quantum well lasers with low threshold current density grown by molecular beam epitaxy

  • Author

    Saint-Cricq, B. ; Chatenoud, F. ; Lozes-Dupuy, F. ; Fourtine, S. ; Martinot, H.

  • Author_Institution
    CNRS, Toulouse
  • Volume
    24
  • Issue
    9
  • fYear
    1988
  • fDate
    4/28/1988 12:00:00 AM
  • Firstpage
    537
  • Lastpage
    539
  • Abstract
    The letter reports short wavelength emission (7205 Å) from MBE AlGaAs GRINSCH single quantum well lasers. Visible emission is obtained with a 60 Å AlGaAs well containing ≃18% aluminium and both design optimisation and growth conditions lead to low-threshold operation. Broad area Fabry-Perot diodes have threshold current densities as low as 390 A/cm2 and 670 A/cm2 for cavity lengths of 500 μm and 250 μm, respectively
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; gradient index optics; molecular beam epitaxial growth; semiconductor growth; semiconductor junction lasers; 250 micron; 500 micron; 7205 Å; AlGaAs; Fabry-Perot diodes; GRINSCH single quantum well lasers; cavity lengths; design optimisation; growth conditions; low threshold current density; molecular beam epitaxy; semiconductor laser; short wavelength emission; visible lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    19553
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=854965