Power semiconductors empirical diagrams expressing life as a function of temperature excursion

Author

Somos, Istvan L. ; Piccone, Dante E. ; Willinger, Lawrence J. ; Tobin, William H.

Author_Institution

Somos Electra, Lansdowne, PA, USA

Volume

29

Issue

1

fYear

1993

fDate

1/1/1993 12:00:00 AM

Firstpage

517

Lastpage

522

Abstract

Life expectancy for power semiconductor devices under cyclical power is discussed in practical terms as it has evolved over several decades. Predictions of failure, although not absolute, are supported by sound theoretical concepts based on the generalized behavior of materials under elastic-stress conditions. With that, the known property of silicon to fracture when subjected to a single quenching from 350°C to 0°C is combined with results of long-term and accelerated life testing to establish the life expectancy curves. These would apply for specific models and defined current cycling duty including the time gradient of temperature rise

Keywords

integrated circuit testing; life testing; power electronics; power integrated circuits; 0 to 350 degC; Si; accelerated life testing; current cycling duty; cyclical power; elastic-stress; empirical diagrams; failure prediction; fracture; life expectancy; long term testing; materials; power semiconductor devices; quenching; temperature excursion; temperature rise; time gradient; Electrothermal launching; Life testing; Semiconductor diodes; Silicon; Solid state circuits; Spark gaps; Switches; Temperature; Thermal stresses; Thyristors;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.195629

Filename

195629