• DocumentCode
    857600
  • Title

    Controlled reduction of critical current densities in YBCO thin films

  • Author

    Nunez-Regueiro, J.E. ; Kadin, A.M.

  • Author_Institution
    Dept. of Electr. Eng., Rochester Univ., NY, USA
  • Volume
    5
  • Issue
    2
  • fYear
    1995
  • fDate
    6/1/1995 12:00:00 AM
  • Firstpage
    1444
  • Lastpage
    1447
  • Abstract
    The reduction of critical currents in HTS films has proven to be of primary importance for the fabrication of devices sensitive to small applied magnetic fields (<100 Gauss). In this work, we report on a process we have developed for the controlled reduction of critical current densities (J/sub c/´s) on thin films of YBCO. By diffusing SiO in photolithographically defined microbridges of YBCO, we have been able to obtain a reduction of up to three orders of magnitude of the J/sub c/´s of our samples in a reproducible way, without significantly lowering their transition temperatures. The microbridges treated in this way show an increased sensitivity to externally applied magnetic fields. This indicates that our method for reducing the J/sub c/´s of HTS films is a good candidate for the fabrication of flux flow devices. Preliminary experimental results on flux flow devices are discussed.<>
  • Keywords
    barium compounds; critical current density (superconductivity); electron device manufacture; flux flow; high-temperature superconductors; photolithography; superconducting microbridges; superconducting thin films; yttrium compounds; 100 G; HTS; SiO; SiO diffusion; YBCO thin films; YBaCuO; critical current densities; fabrication; flux flow devices; magnetic field; microbridges; photolithography; transition temperatures; Critical current; Critical current density; Fabrication; Gaussian processes; High temperature superconductors; Magnetic fields; Magnetic films; Temperature sensors; Transistors; Yttrium barium copper oxide;
  • fLanguage
    English
  • Journal_Title
    Applied Superconductivity, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1051-8223
  • Type

    jour

  • DOI
    10.1109/77.402837
  • Filename
    402837