Theoretical linewidth enhancement factor alpha of Ga/sub 1-x/In/sub x/As/GaInAsP/InP strained-quantum-well structures

Author

Huang, Yidong ; Arai, Shigehisa ; Komori, Kazuhiro

Author_Institution

Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan

Volume

5

Issue

2

fYear

1993

Firstpage

142

Lastpage

145

Abstract

The linewidth enhancement factor, alpha , in the Ga/sub 1-x/In/sub x/As/GaInAsP/InP strained-quantum-well system was calculated and analyzed using density-matrix theory taking into account the effects of band-mixing on both the valence subbands and the transition dipole moments. As a result of numerical calculation, it was found that a reduced linewidth enhancement factor of 1.1 at the gain peak wavelength can be obtained in the tensile strained-quantum-well structure for TM-mode operation. This is due to the higher differential gain and a negligible free carrier plasma effect in the TM-mode compared to that of the TE-mode operating in the compressively strained-quantum-well structure. This calculation agrees with previously reported experimental results.<>

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser theory; semiconductor lasers; spectral line breadth; Ga/sub 1-x/In/sub x/As/GaInAsP/InP strained-quantum-well structures; GaInAs-GaInAsP-InP; III-V semiconductor; TE-mode; TM-mode operation; band-mixing; density-matrix theory; differential gain; free carrier plasma effect; gain peak wavelength; linewidth enhancement factor; numerical calculation; semiconductor laser; transition dipole moments; valence subbands; Capacitive sensors; Charge carrier density; Conductors; Dispersion; Indium phosphide; Plasma density; Plasma properties; Plasma waves; Refractive index; Semiconductor lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.195984

Filename

195984