Surface diffusion in molecular beam epitaxy of Bi/sub 2/Sr/sub 2/Ca/sub n-1/Cu/sub n/O/sub x/

Author

Ishibashi, T. ; Soutome, H. ; Okada, Y. ; Kawabe, M.

Author_Institution

Inst. of Mater. Sci., Tsukuba Univ., Ibaraki, Japan

Volume

5

Issue

2

fYear

1995

fDate

6/1/1995 12:00:00 AM

Firstpage

1805

Lastpage

1809

Abstract

Thin films of Bi/sub 2/Sr/sub 2/CuO/sub 6+x/ (2201) phase have been tilted SrTiO/sub 3/ [001] substrates by co-deposition method, and Bi/sub 2/Sr/sub 2/CaCu/sub 2/O/sub 8+x/ (2212) phase by interruption technique. The surface diffusion characteristics the molecular beam epitaxy (MBE) of both phases have also been investigated by using in-situ reflection high energy electron diffraction (RHEED). The periodic RHEED intensity oscillations and recovery process been analyzed for 2201 and 2212 phases.<>

Keywords

bismuth compounds; high-temperature superconductors; molecular beam epitaxial growth; reflection high energy electron diffraction; strontium compounds; superconducting epitaxial layers; surface diffusion; Bi/sub 2/Sr/sub 2/Ca/sub n-1/Cu/sub n/O/sub x/ thin films; Bi/sub 2/Sr/sub 2/CaCuO; SrTiO/sub 3/; SrTiO/sub 3/[001] tilted substrates; co-deposition method; interruption technique; molecular beam epitaxy; reflection high energy electron diffraction; surface diffusion; Atomic force microscopy; Atomic measurements; Bismuth; Equations; Force measurement; Molecular beam epitaxial growth; Monitoring; Strontium; Substrates; Temperature;

fLanguage

English

Journal_Title

Applied Superconductivity, IEEE Transactions on

Publisher

ieee

ISSN

1051-8223

Type

jour

DOI

10.1109/77.402930

Filename

402930