• DocumentCode
    859142
  • Title

    Fabrication and characterisation of long-wavelength, GaInAs/AlGaInAs/InP modified-MQW lasers

  • Author

    Williams, P.J. ; Robbins, D.J. ; Reid, T.J. ; Davies, J.L. ; Carter, A.C.

  • Author_Institution
    Plessey Res. Caswell Ltd., Towcester, UK
  • Volume
    25
  • Issue
    1
  • fYear
    1989
  • Firstpage
    5
  • Lastpage
    6
  • Abstract
    Room-temperature operation of GaInAs/AlGaInAs/InP M-MQW lasers grown by low-pressure MOVPE is described for the first time. Threshold current densities were as low as 1.9 kA cm-2 with emission wavelengths of 1.59 mu m.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; semiconductor junction lasers; 1.59 micron; GaInAs-AlGaInAs-InP; characterisation; emission wavelengths; fabrication; long-wavelength; low-pressure MOVPE; modified-MQW lasers; room temperature operation; semiconductors; threshold current density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890004
  • Filename
    19631
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=859142