MTJ Elements With MgO Barrier Using RE-TM Amorphous Layers for Perpendicular MRAM

Author

Hatori, T. ; Ohmori, H. ; Tada, M. ; Nakagawa, S.

Author_Institution

Dept. of Phys. Electron., Tokyo Inst. of Technol.

Volume

43

Issue

6

fYear

2007

fDate

6/1/2007 12:00:00 AM

Firstpage

2331

Lastpage

2333

Abstract

Magnetic properties of an FeCo/TbFeCo bilayer were investigated by MFM and the anomalous Hall effect. In the case of FeCo(x nm)/TbFeCo(50 nm), FeCo as thin as 2 nm behave as perpendicular magnetization film while large thickness of RE-TM films, such as TbFeCo(100nm) causes the increase of the critical thickness up to 4 nm. The prototype of perpendicular MTJ, p-MTJ, consist of TbFeCo/Fe/MgO/Fe/GdFeCo exhibited high squareness ratio of 0.8 having low coercivity of 117 Oe while MgO(100) texture was confirmed in the Fe/MgO/Fe junction prepared on the amorphous GdFeCo layer even though the thickness of MgO is as thin as 3 nm

Keywords

Hall effect; amorphous magnetic materials; cobalt alloys; coercive force; ferromagnetic materials; gadolinium alloys; iron alloys; magnesium compounds; magnetic force microscopy; magnetic storage; magnetic thin films; magnetic tunnelling; magnetisation; terbium alloys; texture; 100 nm; 2 nm; 3 nm; 4 nm; 50 nm; FeCo-TbFeCo; MFM; MTJ elements; RE-TM amorphous layers; TbFeCo-Fe-MgO-Fe-GdFeCo; anomalous Hall effect; coercivity; critical thickness; magnetic force microscopy; magnetic tunneling junction; perpendicular MRM; perpendicular magnetization film; texture; Amorphous materials; Hall effect; Iron; Magnetic films; Magnetic force microscopy; Magnetic tunneling; Magnetization; Perpendicular magnetic anisotropy; Sputtering; Voltage; Magnetic tunneling junction (MTJ); MgO; TbFeCo; p-MRAM; perpendicular MTJ;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2007.894013

Filename

4202755