DocumentCode
859846
Title
Molecular dynamics simulations of direct reactive ion etching: surface roughening of silicon by chlorine
Author
Barone, M.E. ; Robinson, T.0. ; Graves, D.B.
Author_Institution
Coll. of Chem., California Univ., Berkeley, CA, USA
Volume
24
Issue
1
fYear
1996
fDate
2/1/1996 12:00:00 AM
Firstpage
77
Lastpage
78
Abstract
During plasma etching, surfaces can become roughened because of a variety of mechanisms. One source of roughness is illustrated with molecular dynamics simulations of reactive ion etching of a silicon surface with 25-eV Cl+. The three-dimensional (3-D) image of the chlorinated surface and near-surface region is illustrated
Keywords
chlorine; ions; molecular dynamics method; positive ions; silicon; sputter etching; surface topography; 25 eV; Cl; Cl+; Si; direct reactive ion etching; molecular dynamics simulations; near-surface region; plasma etching; semiconductor; surface roughening; three-dimensional image; Atomic layer deposition; Atomic measurements; Etching; Plasma chemistry; Plasma simulation; Rough surfaces; Silicon; Surface cracks; Surface roughness; Visualization;
fLanguage
English
Journal_Title
Plasma Science, IEEE Transactions on
Publisher
ieee
ISSN
0093-3813
Type
jour
DOI
10.1109/27.491699
Filename
491699
Link To Document