• DocumentCode
    860265
  • Title

    Acid colloidal silica slurry for Cu CMP

  • Author

    Kim, Nam-Hoon ; Chang, Eui-Goo

  • Author_Institution
    Sch. of Electr. & Electron. Eng., Chung-Ang Univ., Seoul, South Korea
  • Volume
    40
  • Issue
    1
  • fYear
    2004
  • Firstpage
    26
  • Lastpage
    27
  • Abstract
    Semi-abrasive free slurry for copper chemical mechanical planarisation (CMP) with below 0.5% acid colloidal silica provides good hydrogen peroxide stability, excellent colloidal silica dispersion ability and easiness of post-CMP cleaning. This approach may be useful for the application of singleand first-step copper CMP slurry with one package system.
  • Keywords
    chemical mechanical polishing; colloids; copper; electrokinetic effects; integrated circuit interconnections; integrated circuit metallisation; particle size; planarisation; slurries; Cu; acid colloidal silica slurry; chemical mechanical planarisation; colloidal silica dispersion ability; dual damascene; hydrogen peroxide stability; particle size; post-CMP cleaning; semi-abrasive free slurry; two-step polishing; zeta potential;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20040047
  • Filename
    1260655
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=860265