• DocumentCode
    860380
  • Title

    Fully differential 5 to 6 GHz low noise amplifier using SiGe HBT technology

  • Author

    Erben, U. ; Sönmez, E.

  • Author_Institution
    Atmel Germany GmbH, Heilbronn, Germany
  • Volume
    40
  • Issue
    1
  • fYear
    2004
  • Firstpage
    39
  • Lastpage
    41
  • Abstract
    The application of low-cost packages for 5 GHz devices mainly determines the performance. A report is presented on a fully differential SiGe HBT low noise amplifier, which helps to overcome the package limitation. The realised amplifier exhibits a power gain in excess of 15 dB and a minimum noise figure of less than 2.5 dB while drawing 36 mW from a single 3 V supply.
  • Keywords
    Ge-Si alloys; MMIC amplifiers; S-parameters; bipolar MMIC; bipolar analogue integrated circuits; differential amplifiers; 3 V; 36 mW; 5 GHz; HBT technology; MEXTRAM models; S-parameters; SiGe; fully differential amplifier; low noise amplifier; low-cost packages; power gain;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20040018
  • Filename
    1260664
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=860380