• DocumentCode
    860902
  • Title

    Improved Electrical Properties of Ge p-MOSFET With \\hbox {HfO}_{2} Gate Dielectric by Using \\hbox {TaO}</h1></div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Author</span></div><div class='col-12 col-md-9 leftDirection leftAlign'><h2 class='mb-0 fw-semibold'>Xu, J.P. ; Zhang, X.F. ; Li, C.X. ; Lai, P.T. ; Chan, C.L.</h2></div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Author_Institution</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>Dept. of Electron. Sci. & Technol., Huazhong Univ. of Sci. & Technol., Wuhan</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Volume</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>29</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Issue</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>10</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>fYear</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>2008</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Firstpage</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>1155</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Lastpage</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>1158</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Abstract</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>The electrical characteristics of germanium p-metal-oxide-semiconductor (p-MOS) capacitor and p-MOS field-effect transistor (FET) with a stack gate dielectric of HfO<sub>2</sub>/TaO<i>x</i>N<i>y</i> are investigated. Experimental results show that MOS devices exhibit much lower gate leakage current than MOS devices with only HfO<sub>2</sub> as gate dielectric, good interface properties, good transistor characteristics, and about 1.7-fold hole-mobility enhancement as compared with conventional Si p-MOSFETs. These demonstrate that forming an ultrathin passivation layer of TaO<i>x</i>N<i>y</i> on germanium surface prior to deposition of high-<i>k</i> dielectrics can effectively suppress the growth of unstable GeO<i>x</i>, thus reducing interface states and increasing carrier mobility in the inversion channel of Ge-based transistors.</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Keywords</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>MOS capacitors; MOSFET; elemental semiconductors; germanium; hafnium compounds; hole mobility; leakage currents; passivation; silicon; tantalum compounds; Ge-HfO<sub>2</sub>-TaO<sub>x</sub>N<sub>y</sub>; Si; carrier mobility; germanium p-metal-oxide-semiconductor capacitor; germanium surface; high-k dielectrics; hole mobility; interface states; lower-gate leakage current; p-MOSFET; stack gate dielectrics; transistor; ultrathin passivation layer; Germanium; TaON interlayer; high-$k$; high-<formula formulatype=$k$; pMOSFET;

  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2008.2004282
  • Filename
    4624537
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=860902