Enhanced electron emission from phosphorus-doped diamond-clad silicon field emitter arrays

Author

Ku, T.K. ; Chen, S.H. ; Yang, C.D. ; She, N.J. ; Wang, C.C. ; Chen, C.F. ; Hsieh, I.J. ; Cheng, H.C.

Author_Institution

Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

17

Issue

5

fYear

1996

fDate

5/1/1996 12:00:00 AM

Firstpage

208

Lastpage

210

Abstract

Undoped and phosphorus (P)-doped diamond-clad Si field emitter arrays have been successfully fabricated using microwave plasma chemical vapor deposition (MPCVD) technology. The electron emission from the blunt diamond-clad microtips are much higher than those for the pure Si tips with sharp curvature due to a lower work function. Furthermore, the characteristics of emission current against applied voltage for the P-doped diamond-clad tips show superior emission at lower field to the undoped ones. After the examination of Auger electron spectroscopy (AES) and electrical characteristics of as-grown diamond, such a significant enhancement of the electron emission from the P-doped diamond-clad tips is attributed to a higher electron conductivity and defect densities.

Keywords

Auger effect; diamond; electron field emission; elemental semiconductors; phosphorus; plasma CVD; semiconductor thin films; silicon; vacuum microelectronics; work function; AES; Auger electron spectroscopy; C:P-Si; MPCVD technology; P-doped diamond films; Si; Si field emitter arrays; chemical vapor deposition; defect densities; diamond-clad microtips; electrical characteristics; electron conductivity; electron emission; microwave plasma CVD; work function; Chemical technology; Chemical vapor deposition; Electron emission; Field emitter arrays; Microwave antenna arrays; Microwave technology; Plasma chemistry; Plasma properties; Spectroscopy; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.491831

Filename

491831