Epitaxial growth of NbN and NbC/sub x/N/sub 1-x/ films on 3C-SiC film-covered Si wafers

Author

Shoji, A. ; Kiryu, S. ; Kohjiro, S.

Author_Institution

Electrotech. Lab., Ibaraki, Japan

Volume

5

Issue

2

fYear

1995

fDate

6/1/1995 12:00:00 AM

Firstpage

2396

Lastpage

2399

Abstract

Epitaxial NbN and NbC/sub x/N/sub 1-x/ (x<0.3) films were fabricated on 3C-SiC film-covered Si wafers. It is found that epitaxial NbN films fabricated on 3C-SiC/Si substrates have about one degree higher T/sub c/´s than those for epitaxial NbN films fabricated on MgO substrates. T/sub c/ and normal-state resistivity of fabricated epitaxial NbC/sub x/N/sub 1-x/ films depended on the 3C-SiC overlayer thickness of substrates. From results of R-T characteristic measurements, it is deduced that contact resistance of 3C-SiC and NbN strongly depends on the growth orientation of crystals.<>

Keywords

contact resistance; niobium compounds; superconducting epitaxial layers; superconducting transition temperature; type II superconductors; 3C-SiC film-covered Si wafers; NbC/sub x/N/sub 1-x/ films; NbCN; NbN; NbN films; SiC-Si; contact resistance; critical temperature; epitaxial growth; normal-state resistivity; resistance-temperature characteristic; Crystals; Dielectric substrates; Epitaxial growth; Lattices; Niobium compounds; Oscillators; Semiconductor films; Superconducting epitaxial layers; Superconducting films; Superconducting materials;

fLanguage

English

Journal_Title

Applied Superconductivity, IEEE Transactions on

Publisher

ieee

ISSN

1051-8223

Type

jour

DOI

10.1109/77.403072

Filename

403072