DocumentCode
861894
Title
Monolithic InGaAsP-InP tapered laser amplifier gate 2×2 switch matrix with gain
Author
Dorgeuille ; Mersali ; Feuillade ; Sainson ; Brandon ; Slempkès, S. ; Carrè, M.
Author_Institution
CNET, Bagneux, France
Volume
32
Issue
7
fYear
1996
fDate
3/28/1996 12:00:00 AM
Firstpage
686
Lastpage
688
Abstract
A novel integration design is demonstrated for a 2×2 switching matrix based on laser amplifier gates. For the first time, low loss single-heterostructure waveguides are integrated with double-buried-heterostructure tapered laser amplifiers. This new integration scheme provides a very simple fabrication process with only two epitaxial growth steps. At the on-state (160 mA injected gating current), devices exhibit over 10 dB net chip gain for both input polarisations and all switching matrix paths. Switching operation with gain is achieved
Keywords
III-V semiconductors; gallium arsenide; indium compounds; integrated optics; optical switches; optical waveguide components; semiconductor lasers; 10 dB; InGaAsP-InP; double-buried-heterostructure tapered laser amplifier gate; epitaxial growth; fabrication; gain; integration design; monolithic device; single-heterostructure waveguide; switching matrix;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19960409
Filename
491902
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