NO-plasma effect on low-temperature deposited gate dielectric for organic thin-film transistors

The electrical characteristics of N₂O-plasma treated pentacene thin-film transistors are investigated. The treatment can enhance the on current almost two times, increase the field-effect mobility (mu_FE) greater than 50%, and reduce the interface traps to 31%, compared to devices without plasma treatment. This improvement is presumably owing to pentacene crystallisation enhancement and the decreased traps state density between the pentacene and gate dielectric interface. The N₂O-plasma treated gate dielectric has been found effective in improving organic thin-film transistor (OTFT) performance.