• DocumentCode
    863297
  • Title

    Degradation Characteristics of Au-Si Nuclear Detectors by a Few MeV Charged Particle Irradiation

  • Author

    Ohba, K. ; Shoji, T. ; Ito, S. ; Hiratate, Y.

  • Author_Institution
    Department of Electronics Tohoku Institute of Technology Yagiyama, Sendai 982, Japan
  • Volume
    30
  • Issue
    1
  • fYear
    1983
  • Firstpage
    371
  • Lastpage
    375
  • Abstract
    It is found that a Si surface barrier detector has been degraded after 3.2 MeV protons or 3.5 MeV 3He particle irradiation with low doses ranging from 1011 to 1012 cm-2. The degradation characteristics have been investigated through the changes in the reverse current, capacitance, alpha-particle counting response and DLTS measurements. 3He particle irradiation produces a change of the capacitance at lower reverse bias compared to that of proton irradiation, indicating the defect creation at the short penetration depth of 3He particles. Capacitance-voltage characteristics of the irradiated detectors can be simply analysed using Poisson´s equation with an assumption that the charge defects are created within the depletion layers. Such kinds of defects are considered as electron traps at 0.36, 0.45 and 0.51 eV from the conduction band.
  • Keywords
    Capacitance; Capacitance-voltage characteristics; Current measurement; Degradation; Gold; Particle beams; Poisson equations; Protons; Radiation detectors; Silicon radiation detectors;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1983.4332291
  • Filename
    4332291