• DocumentCode
    863444
  • Title

    A (Ga,Al) as Semiconductor Scintillator with Monolithically Integrated Photodiode: A New Detector

  • Author

    Rühle, W.W. ; Glasow, P.A. ; Schwarzmichel, K.D.

  • Author_Institution
    Siemens AG Central Research Laboratories, D-8520 Erlangen, F.R.Germany
  • Volume
    30
  • Issue
    1
  • fYear
    1983
  • Firstpage
    436
  • Lastpage
    439
  • Abstract
    A new type of a particle detector with a (Ga, Al) As-GaAs heterojunction is demonstrated. A liquid phase epitaxial (Ga, Al) As layer of up to 150 ¿m thickness with graded band gap acts as scintillator and the junction as photodiode with GaAs as absorbing layer. The device can be operated without bias. Particle spectra are presented and the position dependent net e,h pair creation energy is discussed.
  • Keywords
    Absorption; Buffer layers; Gallium arsenide; Heterojunctions; Infrared detectors; Luminescence; Photodiodes; Photonic band gap; Radiation detectors; Semiconductor diodes;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1983.4332306
  • Filename
    4332306
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=863444