DocumentCode
863586
Title
Comment on "Inverse-narrow-width effects and small-geometry MOSFET threshold voltage model" [with reply]
Author
Bhatia, Manju ; Gupta, R.S.
Author_Institution
Dept. of Electron. Sci., Univ. of Delhi South Campus, New Delhi, India
Volume
40
Issue
3
fYear
1993
fDate
3/1/1993 12:00:00 AM
Firstpage
681
Lastpage
682
Abstract
For the original article see ibid., vol.35, no.3, p.325-8 (1988). The commenters solve a two-dimensional Poisson equation by considering the same boundary conditions as given in the above-titled paper by K.K.L. Hsueh et al. They find that the results are entirely different than those obtained in that paper and correspond closely to simulation and experimental data. Hsueh et al. reply that equations (12)-(17) contained a misprint and confirm the correctness of their work.<>
Keywords
insulated gate field effect transistors; semiconductor device models; boundary conditions; inverse narrow width effects; small-geometry MOSFET; threshold voltage model; two-dimensional Poisson equation; Boundary conditions; MOSFET circuits; Poisson equations; Predictive models; Threshold voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.199337
Filename
199337
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