DocumentCode
863649
Title
Modeling of the transient response of substrate traps to the substrate voltage in GaAs FETs
Author
Sengouga, Nouredine ; Jones, Brian K.
Author_Institution
Sch. of Phys. & Math., Lancaster Univ., UK
Volume
40
Issue
3
fYear
1993
fDate
3/1/1993 12:00:00 AM
Firstpage
417
Lastpage
419
Abstract
The transient response of hole traps, related to the substrate in GaAs FETs, following an electric pulse applied to the substrate (or back gate) is accurately modeled. The modeled transient is found to be nonexponential. Excellent agreement between the experimental data and the model is obtained. The trap filling time required for the substrate hole traps is very sensitive to the difference between the Fermi energy and the trap energy
Keywords
Fermi level; III-V semiconductors; field effect transistors; gallium arsenide; hole traps; semiconductor device models; transient response; FETs; Fermi energy; GaAs; electric pulse; experimental data; hole traps; model; semiconductors; substrate traps; substrate voltage; transient response; trap energy; trap filling time; Electric resistance; FETs; Filling; Gallium arsenide; Integrated circuit noise; Low-frequency noise; Optical noise; Physics; Transient response; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.199349
Filename
199349
Link To Document