Modeling for floating body effects in fully depleted SOI MOSFETs

Author

Chen, Heng-Tien Henry ; Huang, Ruey-Shing

Author_Institution

Dept. of Electron., New South Wales Univ., Sydney, NSW, Australia

Volume

40

Issue

3

fYear

1993

fDate

3/1/1993 12:00:00 AM

Firstpage

583

Lastpage

590

Abstract

A model based on SOI MOSFET and BJT device theories is developed to describe the current kink and breakdown phenomena in thin-film SOI MOSFET drain-source current-voltage characteristics operated in strong inversion. The modulation of MOSFET current by raised floating body potential is discussed to provide an insight for understanding the suppression of current kink in fully depleted thin-film SOI devices. The proposed analytical model successfully simulates the drain current-voltage characteristics of thin-film SOI n-MOSFETs fabricated on SIMOX wafers

Keywords

SIMOX; electric breakdown of solids; insulated gate field effect transistors; semiconductor device models; thin film transistors; I-V characteristics; SIMOX wafers; SOI MOSFETs; analytical model; breakdown phenomena; current kink; current modulation; drain-source current-voltage characteristics; floating body effects; fully depleted thin-film SOI devices; strong inversion; Analytical models; Breakdown voltage; CMOS technology; Current-voltage characteristics; Electric breakdown; Impact ionization; MOSFET circuits; Semiconductor thin films; Thin film devices; Transistors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.199364

Filename

199364