DocumentCode

864153

Title

Silicon MOS field effect transistors using impurity redistribution during oxidation

Author

Chopra, Ashish ; Vadasz, L.

Volume

52

Issue

8

fYear

1964

Firstpage

985

Lastpage

986

Keywords

Aluminum; Boron; Doping; Electric breakdown; FETs; Impurities; Oxidation; Silicon; Substrates; Voltage;

fLanguage

English

Journal_Title

Proceedings of the IEEE

Publisher

ieee

ISSN

0018-9219

Type

jour

DOI

10.1109/PROC.1964.3212

Filename

1445142