Polarization conversion in passive deep-etched GaAs/AlGaAs waveguides

Author

Finlayson, Ewan D. ; Heaton, John M. ; Rahman, B. M Azizur ; Obayya, S.S.A.

Author_Institution

QinetiQ, Malvern

Volume

24

Issue

3

fYear

2006

fDate

3/1/2006 12:00:00 AM

Firstpage

1425

Lastpage

1432

Abstract

Experimental results are presented to demonstrate polarization conversion in passive deep-etched gallium arsenide waveguides. The effect due to process-dependent features of waveguide cross-section geometry, in particular the asymmetry resulting from nonvertical etching, is investigated. A qualitative agreement with vector finite element method (VFEM) simulations is shown. A coupled-mode formulation is used to describe the behavior. The results are compared with an elliptical-polarization analysis, obtained from measurements of the polarization angles of the fundamental waveguide modes and the difference between their effective indices. A novel technique used to carry out effective-index-difference measurements is reported

Keywords

III-V semiconductors; aluminium compounds; coupled mode analysis; etching; finite element analysis; gallium arsenide; integrated optics; light polarisation; optical waveguides; vectors; GaAs-AlGaAs; coupled-mode formulation; effective-index-difference measurements; elliptical polarization analysis; fundamental waveguide modes; gallium arsenide waveguides; nonvertical etching; passive deep etching; polarization angles; polarization conversion; vector finite element method; waveguide cross-section geometry; Dielectrics; Electrooptical waveguides; Finite element methods; Gallium arsenide; Optical devices; Optical polarization; Optical waveguide theory; Optical waveguides; Semiconductor waveguides; Waveguide components; Integrated optics; optical polarization, semiconductor waveguides;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/JLT.2005.863240

Filename

1605346