DocumentCode
865608
Title
E-beam direct wafer writing process using a water-soluble conductive layer
Author
Watanabe, Hisashi ; Todokoro, Yoshihiro
Author_Institution
Matushita Electron. Corp., Kyoto, Japan
Volume
36
Issue
3
fYear
1989
fDate
3/1/1989 12:00:00 AM
Firstpage
474
Lastpage
478
Abstract
The water-soluble conductive layer(WSCL) is ammonium poly (p-styrene sulfonate) having ionic conductivity and water solubility. The process consists of applying thin WSCL to the e-beam resist surface prior to the conventional exposure step. WSCL is subsequently removed and the e-beam resist developed in the ordinary way. The process has general utility for various resists, eliminating charging effects caused by -beam exposure
Keywords
VLSI; electron beam lithography; polymer films; E-beam direct wafer writing process; WSCL; ammonium poly (p-styrene sulfonate; e-beam resist surface; eliminating charging effects; ionic conductivity; water-soluble conductive layer; Application specific integrated circuits; Electrical resistance measurement; Fabrication; Lithography; Nonhomogeneous media; Resists; Semiconductor films; Silicon; Surface charging; Writing;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.19956
Filename
19956
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