Increased junction breakdown voltages in silicon-on-insulator diodes

Author

Chen, Hung-Sheng ; Li, Sheng S. ; Fox, Robert M. ; Krull, Wade A.

Author_Institution

Integrated Electron. Center, Florida Univ., Gainesville, FL, USA

Volume

36

Issue

3

fYear

1989

fDate

3/1/1989 12:00:00 AM

Firstpage

488

Lastpage

492

Abstract

A junction breakdown model and the results of PISCES II simulations are presented for silicon-on-insulator (SOI) devices. This model shows the dependence of breakdown voltage in fully depleted (FD) SOI diode on the backgate bias, the properties of the buried oxide layer, and the device parameters. Breakdown in a thin FD SOI diode is quite different from that observed in a thicker, partially depleted (PD) diode. The analysis is supported by breakdown voltage measurements of separation by implantation of oxygen (SIMOX)-based SOI diodes, the results of which suggest that body breakdown is dominant in FD SOI diodes, and the junction curvature effect is dominant in PD SOI diodes. Furthermore, the results also show that breakdown voltage in the FD SOI diode is higher than their bulk-silicon counterpart and can be further increased by applying the appropriate backgate bias

Keywords

electric breakdown of solids; semiconductor device models; semiconductor diodes; semiconductor-insulator boundaries; PISCES II simulations; SIMOX; Si-SiO₂; backgate bias; body breakdown; buried oxide layer; dependence of breakdown voltage; device parameters; fully depleted DOI diode; junction breakdown model; junction curvature effect; silicon-on-insulator diodes; Breakdown voltage; Electric breakdown; Implants; Oxygen; Semiconductor device breakdown; Semiconductor devices; Semiconductor diodes; Silicon on insulator technology; Substrates; Voltage measurement;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.19958

Filename

19958