DocumentCode
866162
Title
GaN-based Indium-tin-oxide light emitting diodes with nanostructured silicon upper contacts
Author
Kuo, C.H. ; Chang, S.J. ; Kuan, H.
Author_Institution
Nat. Central Univ., Chung-Li
Volume
1
Issue
3
fYear
2007
fDate
6/1/2007 12:00:00 AM
Firstpage
110
Lastpage
112
Abstract
GaN-based indium-tin-oxide (ITO) light emitting diodes (LEDs) with p-GaN, n+-short period superlattice (SPS) and nanostructured silicon contact layers were fabricated. It was found that surface of the ITO LED with nanostructured silicon layer was very rough. It was also found that 20 mA forward voltages measured from ITO LEDs with p-GaN, n+-SPS and nanostructured silicon contact layers were 6.01, 3.25 and 3.26 V, respectively. Compared with ITO LED with n+-SPS, it was found that output power of ITO LED with nanostructured silicon contact was 17% larger. Furthermore, it was found that ITO LED with nanostructured silicon contact was more reliable.
Keywords
III-V semiconductors; elemental semiconductors; gallium compounds; indium compounds; light emitting diodes; semiconductor superlattices; silicon; wide band gap semiconductors; GaN-InSnO-Si; LED; current 20 mA; forward voltage; light emitting diodes; n+-short period superlattice; nanostructured upper contacts;
fLanguage
English
Journal_Title
Optoelectronics, IET
Publisher
iet
ISSN
1751-8768
Type
jour
Filename
4205453
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