• DocumentCode
    866937
  • Title

    C.W. X and K band radiation from GaAs epitaxial layers

  • Author

    Hilsum, C. ; Smith, K.C.H. ; Taylor, B.C. ; Knight, J.R.

  • Author_Institution
    Royal Radar Establishment, Malvern, UK
  • Volume
    1
  • Issue
    6
  • fYear
    1965
  • fDate
    8/1/1965 12:00:00 AM
  • Firstpage
    178
  • Abstract
    It has been shown previously that fields of 3000 V/cm applied to GaAs sam generate microwave oscillations. This letter describes experiments with epitaxial GaAs layers 13 ¿m thick. These have been operated c.w., with applied voltages less than 9V, and have generated fundamental frequencies near 12 Gc/s, with additional frequencies near 15, 19 and 23 Gc/s.
  • Keywords
    oscillations; semiconductors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19650166
  • Filename
    4205671
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=866937