A 2-18 GHz low-noise/high-gain amplifier module

Author

Niclas, Karl B. ; Pereira, Ramon R. ; Chang, Augustin P.

Author_Institution

Watkins-Johnson Co., Palo Alto, CA, USA

Volume

37

Issue

1

fYear

1989

fDate

1/1/1989 12:00:00 AM

Firstpage

198

Lastpage

207

Abstract

The effectiveness of the two-tier matrix amplifier as a very-low-noise device with very high associated gains across multioctave frequency bands is theoretically and experimentally demonstrated. Experimental modules whose topology is based on a computer-optimized design exhibit an average noise figure of F=3.5 dB with an associated average gain of G=17.8 dB across the 2-18 GHz frequency band. These state-of-the-art results were achieved with GaAs MESFETs whose minimum noise figure is F=2.2 dB at 18 GHz and whose gate dimensions are 0.25×200 μm. The design considerations and the test results are discussed in detail

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; microwave amplifiers; microwave integrated circuits; modules; 0.25 micron; 17.8 dB; 2 to 18 GHz; 2.2 to 3.5 dB; 200 micron; GaAs; III-V semiconductors; LNA; MESFETs; MIC; SHF; amplifier module; computer-optimized design; gate dimensions; high-gain; low-noise; microwave amplifier; multioctave frequency bands; two-tier matrix amplifier; Circuit noise; Design optimization; Frequency; Gallium arsenide; Low-noise amplifiers; MESFETs; Noise figure; Testing; Topology; Tuners;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.20039

Filename

20039