SiO2-isolated visible amorphous thin-film LED fabricated on crystalline silicon substrate

SiO₂-isolated Si-based n-a(amorphous)-Si:H/i-a-SiC:H/p-a-Si:H thin-film LEDs (TFLEDs) with n-a-Si/n-type crystalline silicon (c-Si) hetero-interface have been proposed and fabricated successfully on an n/n⁺ c-Si wafer. The obtained TFLEDs revealed a brightness of 855 cd/m² at an injection current density of 0.49 A/cm² and a broad electroluminescence intensity with a flat-top wavelength ranging from 600 to 690 nm and a FWHM=205 nm at an applied voltage of 15 V. Experimental results demonstrated the feasibility of developing Si-based visible light-emitting devices on c-Si substrate.