• DocumentCode
    868824
  • Title

    Electrical characteristics of ultrathin Pt/Y2O3/Si capacitor with rapid post-metallisation annealing

  • Author

    Lay, T.S. ; Liu, W.D. ; Kwo, J. ; Hong, M. ; Mannaerts, J.P.

  • Author_Institution
    Inst. of Electro-Opt. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
  • Volume
    38
  • Issue
    24
  • fYear
    2002
  • fDate
    11/21/2002 12:00:00 AM
  • Firstpage
    1594
  • Lastpage
    1596
  • Abstract
    After rapid post-metallisation annealing (PMA) in forming gas at 425°C for 30 s, the Pt/Y2O3/Si capacitor shows a sharp capacitance-voltage swing and an increase of accumulation capacitance, and a decrease of the leakage current compared to the sample without PMA. A low oxide charge density of ∼7.7 × 1010 cm-2, and a minimum interface state density of ∼3.6 × 1010 cm-2 eV-1 were obtained at the Y2O3/Si interface with PMA.
  • Keywords
    MOS capacitors; capacitance; dielectric thin films; interface states; leakage currents; platinum; rapid thermal annealing; silicon; yttrium compounds; 30 s; 425 C; Pt-Y2O3-Si; accumulation capacitance; capacitance-voltage swing; electrical characteristics; forming gas annealing; gate dielectric; leakage current; low oxide charge density; minimum interface state density; rapid post-metallisation annealing; ultrathin Pt/Y2O3/Si capacitor;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20021058
  • Filename
    1106138
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=868824