DocumentCode
868833
Title
Modelling of charging effects caused by anodic bonding in packaged MOS devices
Author
Schjolberg-Henriksen, K. ; Fjeldly, T.A. ; Santander, J. ; Plaza, J.A. ; Hanneborg, A.
Author_Institution
Dept. of Phys., Oslo Univ., Norway
Volume
38
Issue
24
fYear
2002
fDate
11/21/2002 12:00:00 AM
Firstpage
1596
Lastpage
1597
Abstract
The electrical effects of anodic bonding on the gate oxide of packaged MOS devices are presented, and shown to be dependent both on the gate oxide fabrication process and on the design of the glass cavity. Methods to incorporate these effects in the device models to ensure reliable circuit simulations for the wafer-level packaged devices are proposed.
Keywords
MIS devices; MOS capacitors; MOSFET; dielectric thin films; interface states; leakage currents; semiconductor device models; semiconductor device packaging; semiconductor-insulator boundaries; surface charging; CMOS capacitors; anodic bonding; charging effects modelling; device models; electrical effects; gate oxide fabrication process; glass cavity design; packaged MOS devices; reliable circuit simulations; wafer-level packaged devices;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20021044
Filename
1106139
Link To Document