DocumentCode
868844
Title
Semi-insulating layers in 4H and 6H SiC by Si and C ion implantation
Author
White, J.C. ; Harris, G.L. ; Poker, D.B.
Author_Institution
Dept. of Electr. Eng., Howard Univ., Washington, DC, USA
Volume
38
Issue
24
fYear
2002
fDate
11/21/2002 12:00:00 AM
Firstpage
1597
Lastpage
1598
Abstract
Semi-insulating regions have been obtained in 6H and 4H silicon carbide using ion implantation. The silicon carbide samples were implanted with either carbon or silicon ions followed by isochronal heat treatments. This leads to compensation, which is achieved by the lattice damage and by the thermal redistribution of atoms.
Keywords
annealing; electrical resistivity; ion beam effects; ion implantation; silicon compounds; wide band gap semiconductors; 0.4 to 3.0 MeV; 0.5 to 4.5 MeV; 4H SiC; 600 to 1200 C; 6H SiC; C ion implantation; Si ion implantation; SiC; annealing temperature; compensation; isochronal heat treatments; lattice damage; semi-insulating layers; temperature dependent resistivity measurements; thermal atom redistribution;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20021045
Filename
1106140
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