• DocumentCode
    869118
  • Title

    Behaviour of m.o.s. structures under X ray irradiation

  • Author

    Giralt, G. ; Andre, B. ; Simonne, J. ; Esteve, D.

  • Author_Institution
    Université de Toulouse, Laboratoire de Génie Ã\x89lectrique, Toulouse, France
  • Volume
    2
  • Issue
    6
  • fYear
    1966
  • fDate
    6/1/1966 12:00:00 AM
  • Firstpage
    209
  • Lastpage
    210
  • Abstract
    Experiments on m.o.s. structures when irradiated by X rays involve distributions of positive charges in the dielectric layer. As an interpretation of the results, including the curing of irradiated devices by annealing, we propose ionic-charge motions in the oxidised silicon, depending on the sense of the applied electric field.
  • Keywords
    radiation; transistors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19660176
  • Filename
    4206840
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=869118