Crosstalk Effects Caused by Single Event Hits in Deep Sub-Micron CMOS Technologies

Author

Balasubramanian, A. ; Sternberg, A.L. ; Bhuva, B.L. ; Massengill, L.W.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN

Volume

53

Issue

6

fYear

2006

Firstpage

3306

Lastpage

3311

Abstract

In deep sub-micron technologies, scaling and closely packed interconnects magnify crosstalk effects causing a Single Event Transient (SET) pulse to affect multiple logic paths instead of the single hit path. Such events increase the vulnerable area and the SET susceptibility of complementary metal-oxide-semiconductor (CMOS) circuits. This paper analyses factors affecting the crosstalk pulse due to an Single Event Upset (SEU) in digital logic circuits for advanced technologies. Simulation results obtained substantiate that the effects of Single Event (SE) crosstalk increase as devices scale down, as the amount of charge deposited to cause an upset increases, and as the interconnect length increases

Keywords

CMOS logic circuits; crosstalk; integrated circuit interconnections; radiation effects; SEU; closely packed interconnects; crosstalk effects; deep submicron CMOS circuits; digital logic circuits; multiple logic paths; radiation effects; single event hits; single event transient pulse; single event upset; CMOS logic circuits; CMOS technology; Circuit analysis; Circuit simulation; Crosstalk; Discrete event simulation; Integrated circuit interconnections; Logic circuits; Pulse circuits; Single event upset; Complementary metal-oxide-semiconductor (CMOS); crosstalk; deep sub-micron; single event transient (SET); single events (SE);

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2006.884675

Filename

4033187